BLF6G21-10G/NXP，

Power LDMOS transistor Rev. 
功率LDMOS晶体管转速。

10 W LDMOS power transistor for base station applications at frequencies fromHF to 2200 MHzTable 1.Typical performanceIDq= 100 mA; Tcase= 25°C in a common source class-AB production test circuit.Mode of operation2-carrier W-CDMA1-carrier W-CDMA[1]f(MHz)2110 to 21702110 to 2170VDS(V)2828PL(AV)(W)0.72Gp(dB)18.519.3ηD(%)1531ACPR(dBc)−50[1]−39[1]Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;carrier spacing 5 MHz.
10 W LDMOS功率晶体管基站应用频率fromHF 2200 MHzTable 1。典型的马performanceIDq = 100;Tcase = 25°C源ab类生产测试电路。模式operation2-carrier W-CDMA1-carrier W - cdma[1]vds f(MHz)2110 - 2110 - 2110(V)2828年pl(AV)0.72(W)gp(dB)18.519.3ηD(%)1531年acpr 50[1](dBc)−−39[1]测试信号:3 gpp;测试模型1;64 DPCH;PAR = 7.5 dB在0.01%概率每载波CCDF;载波间隔5 MHz